HGTP10N120BN - IGBT 1200V 35A 298W TO220AB

Fabricant Nimewo Pati

HGTP10N120BN

Entèn Nimewo Pati

AX-HGTP10N120BN

Fabricant

ON Semiconductor

Kout Deskripsyon

IGBT 1200V 35A 298W TO220AB

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

262110 Pieces

referans pri

~~USD 1.070376~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen HGTP10N120BN nan stock pou vann.

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Espesifikasyon pou HGTP10N120BN

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stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : HGTP10N120BN

Fabricant : ON Semiconductor

Deskripsyon : IGBT 1200V 35A 298W TO220AB

Seri : -

Estati Pati : Not For New Designs

Kalite IGBT : NPT

Voltage - Pèseptè ki emèt deba (Max) : 1200V

Kouran - Pèseptè (Ic) (Max) : 35A

Kouran - Pèseptè batman (Icm) : 80A

Vce (sou) (Max) @ Vge, Ic : 2.7V @ 15V, 10A

Pouvwa - Max : 298W

Oblije chanje enèji : 320µJ (on), 800µJ (off)

Kalite Antre : Standard

Gate chaje : 100nC

Td (on / off) @ 25 ° C : 23ns/165ns

Kondisyon egzamen an : 960V, 10A, 10 Ohm, 15V

Ranvèse Tan Reverse (trr) : -

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake / Ka : TO-220-3

Pake Aparèy Founisè : TO-220-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : HGTP , HGTP10

dokiman pou HGTP10N120BN

Fich : HGTP10N120BN.pdf

pwodwi ki gen rapò pou HGTP10N120BN ON Semiconductor

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