R6002END3TL1 - NCH 600V 2A POWER MOSFET

Fabricant Nimewo Pati

R6002END3TL1

Entèn Nimewo Pati

AX-R6002END3TL1

Fabricant

Rohm Semiconductor

Kout Deskripsyon

NCH 600V 2A POWER MOSFET

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1210155 Pieces

referans pri

~~USD 0.23184~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen R6002END3TL1 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou R6002END3TL1

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : R6002END3TL1

Fabricant : Rohm Semiconductor

Deskripsyon : NCH 600V 2A POWER MOSFET

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.7A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 3.4 Ohm @ 500mA, 10V

Vgs (th) (Max) @ Id : 4V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 6.5nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 65pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 26W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : TO-252

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : R600 , R6002E

dokiman pou R6002END3TL1

Fich : R6002END3TL1.pdf

pwodwi ki gen rapò pou R6002END3TL1 Rohm Semiconductor

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