SI4778DY-T1-E3 - MOSFET N-CH 25V 8A 8-SOIC

Fabricant Nimewo Pati

SI4778DY-T1-E3

Entèn Nimewo Pati

AX-SI4778DY-T1-E3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET N-CH 25V 8A 8-SOIC

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

12064 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SI4778DY-T1-E3 nan stock pou vann.

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Espesifikasyon pou SI4778DY-T1-E3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SI4778DY-T1-E3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET N-CH 25V 8A 8-SOIC

Seri : TrenchFET®

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 25V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 23 mOhm @ 7A, 10V

Vgs (th) (Max) @ Id : 2.2V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 18nC @ 10V

Vgs (Max) : ±16V

Antre kapasite (Ciss) (Max) @ Vds : 680pF @ 13V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 2.4W (Ta), 5W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-SO

Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SI47 , SI4778D

dokiman pou SI4778DY-T1-E3

Fich : SI4778DY-T1-E3.pdf

pwodwi ki gen rapò pou SI4778DY-T1-E3 Vishay Siliconix

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