IRL6372PBF - MOSFET 2N-CH 30V 8.1A 8SO

Fabricant Nimewo Pati

IRL6372PBF

Entèn Nimewo Pati

AX-IRL6372PBF

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET 2N-CH 30V 8.1A 8SO

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

29141 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IRL6372PBF nan stock pou vann.

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Espesifikasyon pou IRL6372PBF

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IRL6372PBF

Fabricant : Infineon Technologies

Deskripsyon : MOSFET 2N-CH 30V 8.1A 8SO

Seri : HEXFET®

Estati Pati : Discontinued at Digi-Key

FET Kalite : 2 N-Channel (Dual)

Karakteristik FET : Logic Level Gate

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8.1A

RD sou (Max) @ Id, Vgs : 17.9 mOhm @ 8.1A, 4.5V

Vgs (th) (Max) @ Id : 1.1V @ 10µA

Chaje Gate (Qg) (Max) @ Vgs : 11nC @ 4.5V

Antre kapasite (Ciss) (Max) @ Vds : 1020pF @ 25V

Pouvwa - Max : 2W

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

Pake Aparèy Founisè : 8-SO

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IRL , IRL63

dokiman pou IRL6372PBF

Fich : IRL6372PBF.pdf

pwodwi ki gen rapò pou IRL6372PBF Infineon Technologies

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