IXTM11N80 - POWER MOSFET TO-3

Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
POWER MOSFET TO-3
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
22659 Pieces
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IXTM11N80 nan stock pou vann.
D 'opsyon ak anbake tan:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Posiblite peman:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Espesifikasyon pou IXTM11N80

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : IXTM11N80
Fabricant : IXYS
Deskripsyon : POWER MOSFET TO-3
Seri : GigaMOS™
Estati Pati : Last Time Buy
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 11A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 950 mOhm @ 5.5A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 170nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 4500pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 300W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-204AA
Pake / Ka : TO-204AA, TO-3
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : IXT , IXTM

dokiman pou IXTM11N80

Fich : IXTM11N80.pdf

pwodwi ki gen rapò pou IXTM11N80 IXYS

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