FDD5N53TM_WS - MOSFET N-CH 530V 4A DPAK

Fabricant Nimewo Pati

FDD5N53TM_WS

Entèn Nimewo Pati

AX-FDD5N53TM_WS

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 530V 4A DPAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

7264 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FDD5N53TM_WS nan stock pou vann.

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Espesifikasyon pou FDD5N53TM_WS

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FDD5N53TM_WS

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 530V 4A DPAK

Seri : UniFET™

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 530V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 1.5 Ohm @ 2A, 10V

Vgs (th) (Max) @ Id : 5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 15nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 640pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 40W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : D-Pak

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FDD5 , FDD5N5

dokiman pou FDD5N53TM_WS

Fich : FDD5N53TM_WS.pdf

pwodwi ki gen rapò pou FDD5N53TM_WS ON Semiconductor

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