UG8JT-E3/45 - DIODE GEN PURP 600V 8A TO220AC

Fabricant Nimewo Pati

UG8JT-E3/45

Entèn Nimewo Pati

AX-UG8JT-E3/45

Fabricant

Vishay Semiconductor Diodes Division

Kout Deskripsyon

DIODE GEN PURP 600V 8A TO220AC

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

562750 Pieces

referans pri

~~USD 0.498552~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen UG8JT-E3/45 nan stock pou vann.

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Espesifikasyon pou UG8JT-E3/45

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : UG8JT-E3/45

Fabricant : Vishay Semiconductor Diodes Division

Deskripsyon : DIODE GEN PURP 600V 8A TO220AC

Seri : -

Estati Pati : Active

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 600V

Kouran - Mwayèn Rèktifye (Io) : 8A

Voltage - Forward (Vf) (Max) @ Si : 1.75V @ 8A

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : 50ns

Kouran - Fèy Reverse @ Vr : 30µA @ 600V

Kapasite @ Vr, F : -

Mounting Kalite : Through Hole

Pake / Ka : TO-220-2

Pake Aparèy Founisè : TO-220AC

Operating Tanperati - Junction : -55°C ~ 150°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : UG8 , UG8JT

dokiman pou UG8JT-E3/45

Fich : UG8JT-E3/45.pdf

pwodwi ki gen rapò pou UG8JT-E3/45 Vishay Semiconductor Diodes Division

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