FQA13N80-F109 - MOSFET N-CH 800V 12.6A TO-3P

Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N-CH 800V 12.6A TO-3P
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
75905 Pieces
referans pri
USD 3.696
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FQA13N80-F109 nan stock pou vann.
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Espesifikasyon pou FQA13N80-F109

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : FQA13N80-F109
Fabricant : ON Semiconductor
Deskripsyon : MOSFET N-CH 800V 12.6A TO-3P
Seri : QFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 12.6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 750 mOhm @ 6.3A, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 88nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 3500pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 300W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-3PN
Pake / Ka : TO-3P-3, SC-65-3
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : FQA1 , FQA13N

dokiman pou FQA13N80-F109

pwodwi ki gen rapò pou FQA13N80-F109 ON Semiconductor

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