IPD80N06S3-09 - MOSFET N-CH 55V 80A TO252-3

Fabricant Nimewo Pati

IPD80N06S3-09

Entèn Nimewo Pati

AX-IPD80N06S3-09

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 55V 80A TO252-3

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

8368 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IPD80N06S3-09 nan stock pou vann.

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Espesifikasyon pou IPD80N06S3-09

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IPD80N06S3-09

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 55V 80A TO252-3

Seri : OptiMOS™

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 55V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 80A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 8.4 mOhm @ 40A, 10V

Vgs (th) (Max) @ Id : 4V @ 55µA

Chaje Gate (Qg) (Max) @ Vgs : 88nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 6100pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 107W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : PG-TO252-3

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IPD8 , IPD80N

dokiman pou IPD80N06S3-09

Fich : IPD80N06S3-09.pdf

pwodwi ki gen rapò pou IPD80N06S3-09 Infineon Technologies

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