BSC019N06NSATMA1 - DIFFERENTIATED MOSFETS

Fabricant Nimewo Pati

BSC019N06NSATMA1

Entèn Nimewo Pati

AX-BSC019N06NSATMA1

Fabricant

Infineon Technologies

Kout Deskripsyon

DIFFERENTIATED MOSFETS

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

408205 Pieces

referans pri

~~USD 0.687306~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen BSC019N06NSATMA1 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou BSC019N06NSATMA1

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : BSC019N06NSATMA1

Fabricant : Infineon Technologies

Deskripsyon : DIFFERENTIATED MOSFETS

Seri : OptiMOS™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 60V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V

RD sou (Max) @ Id, Vgs : 1.95 mOhm @ 50A, 10V

Vgs (th) (Max) @ Id : 3.3V @ 74µA

Chaje Gate (Qg) (Max) @ Vgs : 77nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 5.25nF @ 30V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 136W (Ta)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : PG-TDSON-8 FL

Pake / Ka : 8-PowerTDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : BSC01 , BSC019N0

dokiman pou BSC019N06NSATMA1

Fich : BSC019N06NSATMA1.pdf

pwodwi ki gen rapò pou BSC019N06NSATMA1 Infineon Technologies

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