IDB09E60ATMA1 - DIODE GEN PURP 600V 19.3A TO263

Fabricant Nimewo Pati

IDB09E60ATMA1

Entèn Nimewo Pati

AX-IDB09E60ATMA1

Fabricant

Infineon Technologies

Kout Deskripsyon

DIODE GEN PURP 600V 19.3A TO263

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

16568 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IDB09E60ATMA1 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IDB09E60ATMA1

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IDB09E60ATMA1

Fabricant : Infineon Technologies

Deskripsyon : DIODE GEN PURP 600V 19.3A TO263

Seri : -

Estati Pati : Obsolete

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 600V

Kouran - Mwayèn Rèktifye (Io) : 19.3A (DC)

Voltage - Forward (Vf) (Max) @ Si : 2V @ 9A

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : 75ns

Kouran - Fèy Reverse @ Vr : 50µA @ 600V

Kapasite @ Vr, F : -

Mounting Kalite : Surface Mount

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pake Aparèy Founisè : PG-TO263-3

Operating Tanperati - Junction : -55°C ~ 175°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IDB0 , IDB09E

dokiman pou IDB09E60ATMA1

Fich : IDB09E60ATMA1.pdf

pwodwi ki gen rapò pou IDB09E60ATMA1 Infineon Technologies

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