SI6562CDQ-T1-GE3 - MOSFET N/P-CH 20V 6.7A 8-TSSOP

Fabricant Nimewo Pati

SI6562CDQ-T1-GE3

Entèn Nimewo Pati

AX-SI6562CDQ-T1-GE3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET N/P-CH 20V 6.7A 8-TSSOP

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

966520 Pieces

referans pri

~~USD 0.29028~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SI6562CDQ-T1-GE3 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou SI6562CDQ-T1-GE3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SI6562CDQ-T1-GE3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET N/P-CH 20V 6.7A 8-TSSOP

Seri : TrenchFET®

Estati Pati : Active

FET Kalite : N and P-Channel

Karakteristik FET : Logic Level Gate

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.7A, 6.1A

RD sou (Max) @ Id, Vgs : 22 mOhm @ 5.7A, 4.5V

Vgs (th) (Max) @ Id : 1.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 23nC @ 10V

Antre kapasite (Ciss) (Max) @ Vds : 850pF @ 10V

Pouvwa - Max : 1.6W, 1.7W

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 8-TSSOP (0.173", 4.40mm Width)

Pake Aparèy Founisè : 8-TSSOP

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SI656 , SI6562CD

dokiman pou SI6562CDQ-T1-GE3

Fich : SI6562CDQ-T1-GE3.pdf

pwodwi ki gen rapò pou SI6562CDQ-T1-GE3 Vishay Siliconix

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