UGB15JT-E3H/I - DIODE ARRAY GENERAL PURPOSE

Fabricant Nimewo Pati

UGB15JT-E3H/I

Entèn Nimewo Pati

AX-UGB15JT-E3H/I

Fabricant

Vishay Semiconductor Diodes Division

Kout Deskripsyon

DIODE ARRAY GENERAL PURPOSE

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

67385 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen UGB15JT-E3H/I nan stock pou vann.

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Espesifikasyon pou UGB15JT-E3H/I

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Nimewo pati : UGB15JT-E3H/I

Fabricant : Vishay Semiconductor Diodes Division

Deskripsyon : DIODE ARRAY GENERAL PURPOSE

Seri : -

Estati Pati : Obsolete

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 600V

Kouran - Mwayèn Rèktifye (Io) : 15A

Voltage - Forward (Vf) (Max) @ Si : 1.75V @ 15A

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : 50ns

Kouran - Fèy Reverse @ Vr : 30µA @ 600V

Kapasite @ Vr, F : -

Mounting Kalite : Surface Mount

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pake Aparèy Founisè : TO-263 (D2Pak)

Operating Tanperati - Junction : -55°C ~ 150°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : UGB1 , UGB15J

dokiman pou UGB15JT-E3H/I

Fich : UGB15JT-E3H/I.pdf

pwodwi ki gen rapò pou UGB15JT-E3H/I Vishay Semiconductor Diodes Division

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