MBR8H100MFST3G - DIODE SCHOTTKY 100V 8A 5DFN
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
DIODE SCHOTTKY 100V 8A 5DFN
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
2264655 Pieces
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen MBR8H100MFST3G nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Espesifikasyon pou MBR8H100MFST3G
Kalite Garanti :
365 jou garanti
stock Resous :
Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati :
MBR8H100MFST3G
Fabricant :
ON Semiconductor
Deskripsyon :
DIODE SCHOTTKY 100V 8A 5DFN
Seri :
-
Estati Pati :
Active
Kalite dyòd :
Schottky
Voltage - DC Ranvèse (Vr) (Max) :
100V
Kouran - Mwayèn Rèktifye (Io) :
8A
Voltage - Forward (Vf) (Max) @ Si :
900mV @ 8A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
2µA @ 100V
Kapasite @ Vr, F :
-
Mounting Kalite :
Surface Mount
Pake / Ka :
8-PowerTDFN, 5 Leads
Pake Aparèy Founisè :
5-DFN (5x6) (8-SOFL)
Operating Tanperati - Junction :
-55°C ~ 175°C
Pwa :
-
kondisyon :
Nouvo ak orijinal
dokiman pou MBR8H100MFST3G
Fich :
MBR8H100MFST3G.pdf
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