SQJQ900E-T1_GE3 - MOSFET 2 N-CH 40V POWERPAK8X8

Fabricant Nimewo Pati

SQJQ900E-T1_GE3

Entèn Nimewo Pati

AX-SQJQ900E-T1_GE3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET 2 N-CH 40V POWERPAK8X8

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

371880 Pieces

referans pri

~~USD 0.754428~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SQJQ900E-T1_GE3 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou SQJQ900E-T1_GE3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SQJQ900E-T1_GE3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET 2 N-CH 40V POWERPAK8X8

Seri : Automotive, AEC-Q101, TrenchFET®

Estati Pati : Active

FET Kalite : 2 N-Channel (Dual)

Karakteristik FET : Standard

Drenaj nan Voltage Sous (Vdss) : 40V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100A (Tc)

RD sou (Max) @ Id, Vgs : 3.9 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 120nC @ 10V

Antre kapasite (Ciss) (Max) @ Vds : 5900pF @ 20V

Pouvwa - Max : 75W

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : PowerPAK® 8 x 8 Dual

Pake Aparèy Founisè : PowerPAK® 8 x 8 Dual

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SQJQ9 , SQJQ900

dokiman pou SQJQ900E-T1_GE3

Fich : SQJQ900E-T1_GE3.pdf

pwodwi ki gen rapò pou SQJQ900E-T1_GE3 Vishay Siliconix

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