IPB036N12N3GATMA1 - MOSFET N-CH 120V 180A TO263-7

Fabricant Nimewo Pati

IPB036N12N3GATMA1

Entèn Nimewo Pati

AX-IPB036N12N3GATMA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 120V 180A TO263-7

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

122375 Pieces

referans pri

~~USD 2.29263~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IPB036N12N3GATMA1 nan stock pou vann.

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Espesifikasyon pou IPB036N12N3GATMA1

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IPB036N12N3GATMA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 120V 180A TO263-7

Seri : OptiMOS™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 120V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 180A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 3.6 mOhm @ 100A, 10V

Vgs (th) (Max) @ Id : 4V @ 270µA

Chaje Gate (Qg) (Max) @ Vgs : 211nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 13800pF @ 60V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 300W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : PG-TO263-7

Pake / Ka : TO-263-7, D²Pak (6 Leads + Tab), TO-263CB

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IPB03 , IPB036N1

dokiman pou IPB036N12N3GATMA1

Fich : IPB036N12N3GATMA1.pdf

pwodwi ki gen rapò pou IPB036N12N3GATMA1 Infineon Technologies

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