NP50P03YDG-E1-AY - MOSFET P-CH 30V 50A 8HSON

Fabricant Nimewo Pati

NP50P03YDG-E1-AY

Entèn Nimewo Pati

AX-NP50P03YDG-E1-AY

Fabricant

Renesas Electronics America

Kout Deskripsyon

MOSFET P-CH 30V 50A 8HSON

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

12880 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen NP50P03YDG-E1-AY nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou NP50P03YDG-E1-AY

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : NP50P03YDG-E1-AY

Fabricant : Renesas Electronics America

Deskripsyon : MOSFET P-CH 30V 50A 8HSON

Seri : -

Estati Pati : Active

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 50A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V, 10V

RD sou (Max) @ Id, Vgs : 8.4 mOhm @ 25A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 96nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 3500pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1W (Ta), 102W (Tc)

Operating Tanperati : 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-HSON

Pake / Ka : 8-SMD, Flat Lead Exposed Pad

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : NP50P , NP50P03Y

dokiman pou NP50P03YDG-E1-AY

Fich : NP50P03YDG-E1-AY.pdf

pwodwi ki gen rapò pou NP50P03YDG-E1-AY Renesas Electronics America

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