FQP19N10L - MOSFET N-CH 100V 19A TO-220

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MOSFET N-CH 100V 19A TO-220
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Espesifikasyon pou FQP19N10L

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : FQP19N10L
Fabricant : ON Semiconductor
Deskripsyon : MOSFET N-CH 100V 19A TO-220
Seri : QFET®
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 19A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V, 10V
RD sou (Max) @ Id, Vgs : 100 mOhm @ 9.5A, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 18nC @ 5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 870pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 75W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220-3
Pake / Ka : TO-220-3
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : FQP , FQP1

dokiman pou FQP19N10L

Fich : FQP19N10L.pdf

pwodwi ki gen rapò pou FQP19N10L ON Semiconductor

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