FDZ191P_P - MOSFET P-CH 20V 3A 6WLCSP

Fabricant Nimewo Pati

FDZ191P_P

Entèn Nimewo Pati

AX-FDZ191P_P

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET P-CH 20V 3A 6WLCSP

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

22092 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FDZ191P_P nan stock pou vann.

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Espesifikasyon pou FDZ191P_P

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FDZ191P_P

Fabricant : ON Semiconductor

Deskripsyon : MOSFET P-CH 20V 3A 6WLCSP

Seri : PowerTrench®

Estati Pati : Obsolete

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.5V, 4.5V

RD sou (Max) @ Id, Vgs : 85 mOhm @ 1A, 4.5V

Vgs (th) (Max) @ Id : 1.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 13nC @ 10V

Vgs (Max) : ±8V

Antre kapasite (Ciss) (Max) @ Vds : 800pF @ 10V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1.9W (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 6-WLCSP (1.0x1.5)

Pake / Ka : 6-UFBGA, WLCSP

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FDZ , FDZ1

dokiman pou FDZ191P_P

Fich : FDZ191P_P.pdf

pwodwi ki gen rapò pou FDZ191P_P ON Semiconductor

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