EGL34BHE3/83 - DIODE GEN PURP 100V 500MA DO213

Fabricant Nimewo Pati

EGL34BHE3/83

Entèn Nimewo Pati

AX-EGL34BHE3/83

Fabricant

Vishay Semiconductor Diodes Division

Kout Deskripsyon

DIODE GEN PURP 100V 500MA DO213

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

10808 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen EGL34BHE3/83 nan stock pou vann.

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Espesifikasyon pou EGL34BHE3/83

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : EGL34BHE3/83

Fabricant : Vishay Semiconductor Diodes Division

Deskripsyon : DIODE GEN PURP 100V 500MA DO213

Seri : SUPERECTIFIER®

Estati Pati : Discontinued at Digi-Key

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 100V

Kouran - Mwayèn Rèktifye (Io) : 500mA

Voltage - Forward (Vf) (Max) @ Si : 1.25V @ 500mA

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : 50ns

Kouran - Fèy Reverse @ Vr : 5µA @ 100V

Kapasite @ Vr, F : 7pF @ 4V, 1MHz

Mounting Kalite : Surface Mount

Pake / Ka : DO-213AA (Glass)

Pake Aparèy Founisè : DO-213AA (GL34)

Operating Tanperati - Junction : -65°C ~ 175°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : EGL3 , EGL34B

dokiman pou EGL34BHE3/83

Fich : EGL34BHE3/83.pdf

pwodwi ki gen rapò pou EGL34BHE3/83 Vishay Semiconductor Diodes Division

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