1N5553US - DIODE GEN PURP 800V 3A B-MELF

Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
DIODE GEN PURP 800V 3A B-MELF
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
42990 Pieces
referans pri
USD 7.83
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen 1N5553US nan stock pou vann.
D 'opsyon ak anbake tan:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Posiblite peman:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Espesifikasyon pou 1N5553US

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : 1N5553US
Fabricant : Microsemi Corporation
Deskripsyon : DIODE GEN PURP 800V 3A B-MELF
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 800V
Kouran - Mwayèn Rèktifye (Io) : 3A
Voltage - Forward (Vf) (Max) @ Si : 1.2V @ 9A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 2µs
Kouran - Fèy Reverse @ Vr : 1µA @ 800V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : SQ-MELF, B
Pake Aparèy Founisè : B, SQ-MELF
Operating Tanperati - Junction : -65°C ~ 175°C
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : 1N , 1N55

dokiman pou 1N5553US

Fich : 1N5553US.pdf

pwodwi ki gen rapò pou 1N5553US Microsemi Corporation

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