IRC630PBF - MOSFET N-CH 200V 9A TO-220-5

Fabricant Nimewo Pati

IRC630PBF

Entèn Nimewo Pati

AX-IRC630PBF

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET N-CH 200V 9A TO-220-5

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

68180 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IRC630PBF nan stock pou vann.

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Espesifikasyon pou IRC630PBF

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IRC630PBF

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET N-CH 200V 9A TO-220-5

Seri : HEXFET®

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 200V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 9A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 400 mOhm @ 5.4A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 43nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 800pF @ 25V

Karakteristik FET : Current Sensing

Disipasyon Pouvwa (Max) : 74W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-220-5

Pake / Ka : TO-220-5

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IRC , IRC6

dokiman pou IRC630PBF

Fich : IRC630PBF.pdf

pwodwi ki gen rapò pou IRC630PBF Vishay Siliconix

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