DMN2013UFX-7 - MOSFET 2N-CH 20V 10A 6-DFN
Fabricant Nimewo Pati
Entèn Nimewo Pati
AX-DMN2013UFX-7
Fabricant
Kout Deskripsyon
MOSFET 2N-CH 20V 10A 6-DFN
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
1488570 Pieces
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen DMN2013UFX-7 nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Espesifikasyon pou DMN2013UFX-7
Kalite Garanti :
365 jou garanti
stock Resous :
Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati :
DMN2013UFX-7
Fabricant :
Diodes Incorporated
Deskripsyon :
MOSFET 2N-CH 20V 10A 6-DFN
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual) Common Drain
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10A (Ta)
RD sou (Max) @ Id, Vgs :
11.5 mOhm @ 8.5A, 4.5V
Vgs (th) (Max) @ Id :
1.1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
57.4nC @ 8V
Antre kapasite (Ciss) (Max) @ Vds :
2607pF @ 10V
Pouvwa - Max :
2.14W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
6-VFDFN Exposed Pad
Pake Aparèy Founisè :
W-DFN5020-6
Pwa :
-
kondisyon :
Nouvo ak orijinal
dokiman pou DMN2013UFX-7
Fich :
DMN2013UFX-7.pdf
pwodwi ki gen rapò pou DMN2013UFX-7 Diodes Incorporated
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