NVD5890NLT4G - MOSFET N-CH 40V 123A DPAK

Fabricant Nimewo Pati

NVD5890NLT4G

Entèn Nimewo Pati

AX-NVD5890NLT4G

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 40V 123A DPAK

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Plon gratis / RoHS Konfòm

akouchman Tan

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Espesifikasyon pou NVD5890NLT4G

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : NVD5890NLT4G

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 40V 123A DPAK

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 40V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 24A (Ta), 123A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 3.7 mOhm @ 50A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 42nC @ 4.5V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 4760pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 4W (Ta), 107W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : DPAK

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : NVD5 , NVD589

dokiman pou NVD5890NLT4G

Fich : NVD5890NLT4G.pdf

pwodwi ki gen rapò pou NVD5890NLT4G ON Semiconductor

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