MBR600200CT - DIODE SCHOTTKY 200V 300A 2 TOWER

Fabricant Nimewo Pati

MBR600200CT

Entèn Nimewo Pati

AX-MBR600200CT

Fabricant

GeneSiC Semiconductor

Kout Deskripsyon

DIODE SCHOTTKY 200V 300A 2 TOWER

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

5832 Pieces

referans pri

~~USD 76.76496~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen MBR600200CT nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou MBR600200CT

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : MBR600200CT

Fabricant : GeneSiC Semiconductor

Deskripsyon : DIODE SCHOTTKY 200V 300A 2 TOWER

Seri : -

Estati Pati : Active

Konfigirasyon dyòd : 1 Pair Common Cathode

Kalite dyòd : Schottky

Voltage - DC Ranvèse (Vr) (Max) : 200V

Kouran - Mwayèn Rèktifye (Io) (pou chak dyòd) : 300A

Voltage - Forward (Vf) (Max) @ Si : 920mV @ 300A

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : -

Kouran - Fèy Reverse @ Vr : 3mA @ 200V

Operating Tanperati - Junction : -55°C ~ 150°C

Mounting Kalite : Chassis Mount

Pake / Ka : Twin Tower

Pake Aparèy Founisè : Twin Tower

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : MBR , MBR60

dokiman pou MBR600200CT

Fich : MBR600200CT.pdf

pwodwi ki gen rapò pou MBR600200CT GeneSiC Semiconductor

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