MAP6KE8.2CAE3 - TVS DIODE 7.02V 12.1V T-18
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
TVS DIODE 7.02V 12.1V T-18
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
34279 Pieces
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen MAP6KE8.2CAE3 nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Espesifikasyon pou MAP6KE8.2CAE3
Kalite Garanti :
365 jou garanti
stock Resous :
Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati :
MAP6KE8.2CAE3
Fabricant :
Microsemi Corporation
Deskripsyon :
TVS DIODE 7.02V 12.1V T-18
Seri :
Military, MIL-PRF-19500
Estati Pati :
Active
Kalite :
Zener
Chanèl Unidirèksyonèl :
-
Chanèl bidirèksyonèl yo :
1
Voltage - Ranvèse kanpe (Tip) :
7.02V
Vòltaj - Dekonpozisyon (Min) :
7.79V
Voltage - blocage (Max) @ Ipp :
12.1V
Kouran - Pik batman (10 / 1000µs) :
50A
Pouvwa - Peak batman kè :
600W
Pwoteksyon Liy Pouvwa :
No
Aplikasyon :
General Purpose
Kapasite @ frekans :
-
Operating Tanperati :
-65°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
T-18, Axial
Pake Aparèy Founisè :
T-18
Pwa :
-
kondisyon :
Nouvo ak orijinal
dokiman pou MAP6KE8.2CAE3
Fich :
MAP6KE8.2CAE3.pdf
pwodwi ki gen rapò pou MAP6KE8.2CAE3 Microsemi Corporation
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