FQP6N80C - MOSFET N-CH 800V 5.5A TO-220

Fabricant Nimewo Pati

FQP6N80C

Entèn Nimewo Pati

AX-FQP6N80C

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 800V 5.5A TO-220

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

207820 Pieces

referans pri

~~USD 1.35~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FQP6N80C nan stock pou vann.

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Espesifikasyon pou FQP6N80C

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FQP6N80C

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 800V 5.5A TO-220

Seri : QFET®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 800V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5.5A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 2.5 Ohm @ 2.75A, 10V

Vgs (th) (Max) @ Id : 5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 30nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 1310pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 158W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-220-3

Pake / Ka : TO-220-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FQ , FQP6

dokiman pou FQP6N80C

Fich : FQP6N80C.pdf

pwodwi ki gen rapò pou FQP6N80C ON Semiconductor

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