IPG20N10S4L35AATMA1 - MOSFET 2N-CH 8TDSON

Fabricant Nimewo Pati

IPG20N10S4L35AATMA1

Entèn Nimewo Pati

AX-IPG20N10S4L35AATMA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET 2N-CH 8TDSON

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

912680 Pieces

referans pri

~~USD 0.307404~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IPG20N10S4L35AATMA1 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IPG20N10S4L35AATMA1

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IPG20N10S4L35AATMA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET 2N-CH 8TDSON

Seri : Automotive, AEC-Q101, OptiMOS™

Estati Pati : Active

FET Kalite : 2 N-Channel (Dual)

Karakteristik FET : Logic Level Gate

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 20A

RD sou (Max) @ Id, Vgs : 35 mOhm @ 17A, 10V

Vgs (th) (Max) @ Id : 2.1V @ 16µA

Chaje Gate (Qg) (Max) @ Vgs : 17.4nC @ 10V

Antre kapasite (Ciss) (Max) @ Vds : 1105pF @ 25V

Pouvwa - Max : 43W

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 8-PowerVDFN

Pake Aparèy Founisè : PG-TDSON-8-10

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IPG20N , IPG20N10S

dokiman pou IPG20N10S4L35AATMA1

Fich : IPG20N10S4L35AATMA1.pdf

pwodwi ki gen rapò pou IPG20N10S4L35AATMA1 Infineon Technologies

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