BSO615NGHUMA1 - MOSFET 2N-CH 60V 2.6A 8SOIC

Fabricant Nimewo Pati

BSO615NGHUMA1

Entèn Nimewo Pati

AX-BSO615NGHUMA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET 2N-CH 60V 2.6A 8SOIC

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1048840 Pieces

referans pri

~~USD 0.267498~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen BSO615NGHUMA1 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou BSO615NGHUMA1

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : BSO615NGHUMA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET 2N-CH 60V 2.6A 8SOIC

Seri : SIPMOS®

Estati Pati : Active

FET Kalite : 2 N-Channel (Dual)

Karakteristik FET : Logic Level Gate

Drenaj nan Voltage Sous (Vdss) : 60V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.6A

RD sou (Max) @ Id, Vgs : 150 mOhm @ 2.6A, 4.5V

Vgs (th) (Max) @ Id : 2V @ 20µA

Chaje Gate (Qg) (Max) @ Vgs : 20nC @ 10V

Antre kapasite (Ciss) (Max) @ Vds : 380pF @ 25V

Pouvwa - Max : 2W

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

Pake Aparèy Founisè : PG-DSO-8

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : BSO6 , BSO615

dokiman pou BSO615NGHUMA1

Fich : BSO615NGHUMA1.pdf

pwodwi ki gen rapò pou BSO615NGHUMA1 Infineon Technologies

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