IPDD60R190G7XTMA1 - MOSFET NCH 650V 36A PG-HDSOP-10

Fabricant Nimewo Pati

IPDD60R190G7XTMA1

Entèn Nimewo Pati

AX-IPDD60R190G7XTMA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET NCH 650V 36A PG-HDSOP-10

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

315570 Pieces

referans pri

~~USD 0.88905~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IPDD60R190G7XTMA1 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IPDD60R190G7XTMA1

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IPDD60R190G7XTMA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET NCH 650V 36A PG-HDSOP-10

Seri : CoolMOS™ G7

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 13A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 190 mOhm @ 4.2A, 10V

Vgs (th) (Max) @ Id : 4V @ 210µA

Chaje Gate (Qg) (Max) @ Vgs : 18nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 718pF @ 400V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 76W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : PG-HDSOP-10-1

Pake / Ka : 10-PowerSOP Module

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IPDD6 , IPDD60R1

dokiman pou IPDD60R190G7XTMA1

Fich : IPDD60R190G7XTMA1.pdf

pwodwi ki gen rapò pou IPDD60R190G7XTMA1 Infineon Technologies

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