APT25GP120BDQ1G - IGBT 1200V 69A 417W TO247

Fabricant Nimewo Pati

APT25GP120BDQ1G

Entèn Nimewo Pati

AX-APT25GP120BDQ1G

Fabricant

Microsemi Corporation

Kout Deskripsyon

IGBT 1200V 69A 417W TO247

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

40980 Pieces

referans pri

~~USD 8.214~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen APT25GP120BDQ1G nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou APT25GP120BDQ1G

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : APT25GP120BDQ1G

Fabricant : Microsemi Corporation

Deskripsyon : IGBT 1200V 69A 417W TO247

Seri : POWER MOS 7®

Estati Pati : Active

Kalite IGBT : PT

Voltage - Pèseptè ki emèt deba (Max) : 1200V

Kouran - Pèseptè (Ic) (Max) : 69A

Kouran - Pèseptè batman (Icm) : 90A

Vce (sou) (Max) @ Vge, Ic : 3.9V @ 15V, 25A

Pouvwa - Max : 417W

Oblije chanje enèji : 500µJ (on), 440µJ (off)

Kalite Antre : Standard

Gate chaje : 110nC

Td (on / off) @ 25 ° C : 12ns/70ns

Kondisyon egzamen an : 600V, 25A, 5 Ohm, 15V

Ranvèse Tan Reverse (trr) : -

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake / Ka : TO-247-3

Pake Aparèy Founisè : TO-247 [B]

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : APT25 , APT25GP

dokiman pou APT25GP120BDQ1G

Fich : APT25GP120BDQ1G.pdf

pwodwi ki gen rapò pou APT25GP120BDQ1G Microsemi Corporation

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