SQS966ENW-T1_GE3 - MOSFET N-CHAN 60V

Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N-CHAN 60V
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
1092430 Pieces
referans pri
USD 0.256824
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SQS966ENW-T1_GE3 nan stock pou vann.
D 'opsyon ak anbake tan:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Posiblite peman:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Espesifikasyon pou SQS966ENW-T1_GE3

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : SQS966ENW-T1_GE3
Fabricant : Vishay Siliconix
Deskripsyon : MOSFET N-CHAN 60V
Seri : Automotive, AEC-Q101, TrenchFET®
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6A (Tc)
RD sou (Max) @ Id, Vgs : 36 mOhm @ 1.25A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 8.8nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 572pF @ 25V
Pouvwa - Max : 27.8W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : PowerPAK® 1212-8W
Pake Aparèy Founisè : PowerPAK® 1212-8W
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : SQS96 , SQS966EN

dokiman pou SQS966ENW-T1_GE3

pwodwi ki gen rapò pou SQS966ENW-T1_GE3 Vishay Siliconix

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