SIHG70N60AEF-GE3 - MOSFET N-CH 600V 60A TO247AC

Fabricant Nimewo Pati

SIHG70N60AEF-GE3

Entèn Nimewo Pati

AX-SIHG70N60AEF-GE3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET N-CH 600V 60A TO247AC

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

45876 Pieces

referans pri

~~USD 7.338~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SIHG70N60AEF-GE3 nan stock pou vann.

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Espesifikasyon pou SIHG70N60AEF-GE3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SIHG70N60AEF-GE3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET N-CH 600V 60A TO247AC

Seri : EF

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 60A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 41 mOhm @ 35A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 410nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 5348pF @ 100V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 417W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-247AC

Pake / Ka : TO-247-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SIHG7 , SIHG70N6

dokiman pou SIHG70N60AEF-GE3

Fich : SIHG70N60AEF-GE3.pdf

pwodwi ki gen rapò pou SIHG70N60AEF-GE3 Vishay Siliconix

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