IXTM35N30 - POWER MOSFET TO-3

Fabricant Nimewo Pati

IXTM35N30

Entèn Nimewo Pati

AX-IXTM35N30

Fabricant

IXYS

Kout Deskripsyon

POWER MOSFET TO-3

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

22687 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IXTM35N30 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IXTM35N30

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IXTM35N30

Fabricant : IXYS

Deskripsyon : POWER MOSFET TO-3

Seri : GigaMOS™

Estati Pati : Last Time Buy

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 300V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 35A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 100 mOhm @ 17.5A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 220nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 4600pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 300W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-204AE

Pake / Ka : TO-204AE

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IXT , IXTM

dokiman pou IXTM35N30

Fich : IXTM35N30.pdf

pwodwi ki gen rapò pou IXTM35N30 IXYS

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