R6030ENZ1C9 - MOSFET N-CH 600V 30A TO247

Fabricant Nimewo Pati

R6030ENZ1C9

Entèn Nimewo Pati

AX-R6030ENZ1C9

Fabricant

Rohm Semiconductor

Kout Deskripsyon

MOSFET N-CH 600V 30A TO247

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

83055 Pieces

referans pri

~~USD 3.378~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen R6030ENZ1C9 nan stock pou vann.

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Espesifikasyon pou R6030ENZ1C9

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : R6030ENZ1C9

Fabricant : Rohm Semiconductor

Deskripsyon : MOSFET N-CH 600V 30A TO247

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 30A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 130 mOhm @ 14.5A, 10V

Vgs (th) (Max) @ Id : 4V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 85nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 2100pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 120W (Tc)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-247

Pake / Ka : TO-247-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : R60 , R6030

dokiman pou R6030ENZ1C9

Fich : R6030ENZ1C9.pdf

pwodwi ki gen rapò pou R6030ENZ1C9 Rohm Semiconductor

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