PMGD8000LN,115 - MOSFET 2N-CH 30V 0.125A 6TSSOP
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET 2N-CH 30V 0.125A 6TSSOP
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
25977 Pieces
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen PMGD8000LN,115 nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Espesifikasyon pou PMGD8000LN,115
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : PMGD8000LN,115
Fabricant : NXP USA Inc.
Deskripsyon : MOSFET 2N-CH 30V 0.125A 6TSSOP
Seri : TrenchMOS™
Estati Pati : Obsolete
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 125mA
RD sou (Max) @ Id, Vgs : 8 Ohm @ 10mA, 4V
Vgs (th) (Max) @ Id : 1.5V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs : 0.35nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds : 18.5pF @ 5V
Pouvwa - Max : 200mW
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 6-TSSOP, SC-88, SOT-363
Pake Aparèy Founisè : 6-TSSOP
Pwa : -
kondisyon : Nouvo ak orijinal
dokiman pou PMGD8000LN,115
Fich : PMGD8000LN,115.pdf
pwodwi ki gen rapò pou PMGD8000LN,115 NXP USA Inc.
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