FDMB3800N - MOSFET 2N-CH 30V 4.8A MICROFET

Fabricant Nimewo Pati

FDMB3800N

Entèn Nimewo Pati

AX-FDMB3800N

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET 2N-CH 30V 4.8A MICROFET

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1221540 Pieces

referans pri

~~USD 0.22968~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FDMB3800N nan stock pou vann.

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Espesifikasyon pou FDMB3800N

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FDMB3800N

Fabricant : ON Semiconductor

Deskripsyon : MOSFET 2N-CH 30V 4.8A MICROFET

Seri : PowerTrench®

Estati Pati : Active

FET Kalite : 2 N-Channel (Dual)

Karakteristik FET : Logic Level Gate

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.8A

RD sou (Max) @ Id, Vgs : 40 mOhm @ 4.8A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 5.6nC @ 5V

Antre kapasite (Ciss) (Max) @ Vds : 465pF @ 15V

Pouvwa - Max : 750mW

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 8-PowerWDFN

Pake Aparèy Founisè : 8-MLP, MicroFET (3x1.9)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FDM , FDMB

dokiman pou FDMB3800N

Fich : FDMB3800N.pdf

pwodwi ki gen rapò pou FDMB3800N ON Semiconductor

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