VS-GB100TH120N - IGBT 1200V 200A 833W INT-A-PAK

Fabricant Nimewo Pati

VS-GB100TH120N

Entèn Nimewo Pati

AX-VS-GB100TH120N

Fabricant

Vishay Semiconductor Diodes Division

Kout Deskripsyon

IGBT 1200V 200A 833W INT-A-PAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

9181 Pieces

referans pri

~~USD 214.417002~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen VS-GB100TH120N nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou VS-GB100TH120N

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : VS-GB100TH120N

Fabricant : Vishay Semiconductor Diodes Division

Deskripsyon : IGBT 1200V 200A 833W INT-A-PAK

Seri : -

Estati Pati : Active

Kalite IGBT : -

Nou konte genyen : Half Bridge

Voltage - Pèseptè ki emèt deba (Max) : 1200V

Kouran - Pèseptè (Ic) (Max) : 200A

Pouvwa - Max : 833W

Vce (sou) (Max) @ Vge, Ic : 2.35V @ 15V, 100A

Kouran - Cutoff Pèseptè (Max) : 5mA

Antre kapasite (Cies) @ Vce : 8.58nF @ 25V

Antre : Standard

NTC thermistor : No

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Chassis Mount

Pake / Ka : Double INT-A-PAK (3 + 4)

Pake Aparèy Founisè : Double INT-A-PAK

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : VS-G , VS-GB10

dokiman pou VS-GB100TH120N

Fich : VS-GB100TH120N.pdf

pwodwi ki gen rapò pou VS-GB100TH120N Vishay Semiconductor Diodes Division

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