FQD19N10TM - MOSFET N-CH 100V 15.6A DPAK

Fabricant Nimewo Pati

FQD19N10TM

Entèn Nimewo Pati

AX-FQD19N10TM

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 100V 15.6A DPAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1178795 Pieces

referans pri

~~USD 0.238008~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FQD19N10TM nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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Espesifikasyon pou FQD19N10TM

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FQD19N10TM

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 100V 15.6A DPAK

Seri : QFET®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 15.6A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 100 mOhm @ 7.8A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 25nC @ 10V

Vgs (Max) : ±25V

Antre kapasite (Ciss) (Max) @ Vds : 780pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 2.5W (Ta), 50W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : D-Pak

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FQD , FQD19

dokiman pou FQD19N10TM

Fich : FQD19N10TM.pdf

pwodwi ki gen rapò pou FQD19N10TM ON Semiconductor

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