HUF76609D3 - MOSFET N-CH 100V 10A TO-251AA

Fabricant Nimewo Pati

HUF76609D3

Entèn Nimewo Pati

AX-HUF76609D3

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 100V 10A TO-251AA

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

70175 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen HUF76609D3 nan stock pou vann.

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Espesifikasyon pou HUF76609D3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : HUF76609D3

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 100V 10A TO-251AA

Seri : UltraFET™

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 160 mOhm @ 10A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 16nC @ 10V

Vgs (Max) : ±16V

Antre kapasite (Ciss) (Max) @ Vds : 425pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 49W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : I-PAK

Pake / Ka : TO-251-3 Short Leads, IPak, TO-251AA

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : HUF , HUF76

dokiman pou HUF76609D3

Fich : HUF76609D3.pdf

pwodwi ki gen rapò pou HUF76609D3 ON Semiconductor

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