APT60M80L2VRG - MOSFET N-CH 600V 65A TO-264MAX

Fabricant Nimewo Pati

APT60M80L2VRG

Entèn Nimewo Pati

AX-APT60M80L2VRG

Fabricant

Microsemi Corporation

Kout Deskripsyon

MOSFET N-CH 600V 65A TO-264MAX

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

9370 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen APT60M80L2VRG nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou APT60M80L2VRG

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : APT60M80L2VRG

Fabricant : Microsemi Corporation

Deskripsyon : MOSFET N-CH 600V 65A TO-264MAX

Seri : POWER MOS V®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 65A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 80 mOhm @ 32.5A, 10V

Vgs (th) (Max) @ Id : 4V @ 5mA

Chaje Gate (Qg) (Max) @ Vgs : 590nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 13300pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 833W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : 264 MAX™ [L2]

Pake / Ka : TO-264-3, TO-264AA

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : APT6 , APT60M

dokiman pou APT60M80L2VRG

Fich : APT60M80L2VRG.pdf

pwodwi ki gen rapò pou APT60M80L2VRG Microsemi Corporation

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