IRF5802 - MOSFET N-CH 150V 900MA 6TSOP

Fabricant Nimewo Pati

IRF5802

Entèn Nimewo Pati

AX-IRF5802

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 150V 900MA 6TSOP

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

64560 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IRF5802 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IRF5802

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IRF5802

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 150V 900MA 6TSOP

Seri : HEXFET®

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 150V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 900mA (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 1.2 Ohm @ 540mA, 10V

Vgs (th) (Max) @ Id : 5.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 6.8nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 88pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 2W (Ta)

Operating Tanperati : -

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : Micro6™(TSOP-6)

Pake / Ka : SOT-23-6 Thin, TSOT-23-6

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IR , IRF

dokiman pou IRF5802

Fich : IRF5802.pdf

pwodwi ki gen rapò pou IRF5802 Infineon Technologies

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