IXFT12N100Q - MOSFET N-CH 1000V 12A TO268

Fabricant Nimewo Pati

IXFT12N100Q

Entèn Nimewo Pati

AX-IXFT12N100Q

Fabricant

IXYS

Kout Deskripsyon

MOSFET N-CH 1000V 12A TO268

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

9401 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IXFT12N100Q nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IXFT12N100Q

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IXFT12N100Q

Fabricant : IXYS

Deskripsyon : MOSFET N-CH 1000V 12A TO268

Seri : HiPerFET™

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 1000V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 12A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 1.05 Ohm @ 6A, 10V

Vgs (th) (Max) @ Id : 5.5V @ 4mA

Chaje Gate (Qg) (Max) @ Vgs : 90nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 2900pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 300W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : TO-268

Pake / Ka : TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IXF , IXFT1

dokiman pou IXFT12N100Q

Fich : IXFT12N100Q.pdf

pwodwi ki gen rapò pou IXFT12N100Q IXYS

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