IRFR9N20DTRLPBF - MOSFET N-CH 200V 9.4A DPAK

Fabricant Nimewo Pati

IRFR9N20DTRLPBF

Entèn Nimewo Pati

AX-IRFR9N20DTRLPBF

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 200V 9.4A DPAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

971645 Pieces

referans pri

~~USD 0.28875~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IRFR9N20DTRLPBF nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IRFR9N20DTRLPBF

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IRFR9N20DTRLPBF

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 200V 9.4A DPAK

Seri : HEXFET®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 200V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 9.4A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 380 mOhm @ 5.6A, 10V

Vgs (th) (Max) @ Id : 5.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 27nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 560pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 86W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : D-Pak

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IRFR9 , IRFR9N2

dokiman pou IRFR9N20DTRLPBF

Fich : IRFR9N20DTRLPBF.pdf

pwodwi ki gen rapò pou IRFR9N20DTRLPBF Infineon Technologies

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