AS4C32M16D1-5BIN - IC DRAM 512M PARALLEL 60TFBGA

Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
IC DRAM 512M PARALLEL 60TFBGA
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
128300 Pieces
referans pri
USD 2.431302
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen AS4C32M16D1-5BIN nan stock pou vann.
D 'opsyon ak anbake tan:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Posiblite peman:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Espesifikasyon pou AS4C32M16D1-5BIN

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : AS4C32M16D1-5BIN
Fabricant : Alliance Memory, Inc.
Deskripsyon : IC DRAM 512M PARALLEL 60TFBGA
Seri : -
Estati Pati : Active
Kalite memwa yo : Volatile
Fòma memwa : DRAM
Teknoloji : SDRAM - DDR
Size memwa : 512Mb (32M x 16)
Frè frekans lan : 200MHz
Ekri Sik Tan - Pawòl, Page : 15ns
Tan aksè : 700ps
Entèfas memwa : Parallel
Voltage - Pwovizyon pou : 2.3V ~ 2.7V
Operating Tanperati : -40°C ~ 85°C (TA)
Mounting Kalite : Surface Mount
Pake / Ka : 60-TFBGA
Pake Aparèy Founisè : 60-TFBGA (8x13)
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : AS4C3 , AS4C32M1

dokiman pou AS4C32M16D1-5BIN

pwodwi ki gen rapò pou AS4C32M16D1-5BIN Alliance Memory, Inc.

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