AUIRS20161S - IC DRVR IGBT/MOSFET 8SOIC

Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
IC DRVR IGBT/MOSFET 8SOIC
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
68435 Pieces
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen AUIRS20161S nan stock pou vann.
D 'opsyon ak anbake tan:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Posiblite peman:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Espesifikasyon pou AUIRS20161S

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : AUIRS20161S
Fabricant : Infineon Technologies
Deskripsyon : IC DRVR IGBT/MOSFET 8SOIC
Seri : Automotive, AEC-Q100
Estati Pati : Obsolete
Kondwi konte genyen : High-Side
Kalite Chèn : Single
Kantite Chofè yo : 1
Kalite Gate : IGBT, N-Channel MOSFET
Voltage - Pwovizyon pou : 4.4V ~ 6.5V
Vòltaj lojik - VIL, VIH : -
Kouran - Peak Sòti (Sous, Lavabo) : 500mA, 500mA
Kalite Antre : Inverting
Segondè Voltage Side - Max (Bootstrap) : 150V
Rise / Fall Time (Tip) : 200ns, 200ns
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè : 8-SOIC
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : AUI , AUIRS

dokiman pou AUIRS20161S

pwodwi ki gen rapò pou AUIRS20161S Infineon Technologies

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