AUIRS20161S - IC DRVR IGBT/MOSFET 8SOIC

Fabricant Nimewo Pati

AUIRS20161S

Entèn Nimewo Pati

AX-AUIRS20161S

Fabricant

Infineon Technologies

Kout Deskripsyon

IC DRVR IGBT/MOSFET 8SOIC

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

68435 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen AUIRS20161S nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou AUIRS20161S

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : AUIRS20161S

Fabricant : Infineon Technologies

Deskripsyon : IC DRVR IGBT/MOSFET 8SOIC

Seri : Automotive, AEC-Q100

Estati Pati : Obsolete

Kondwi konte genyen : High-Side

Kalite Chèn : Single

Kantite Chofè yo : 1

Kalite Gate : IGBT, N-Channel MOSFET

Voltage - Pwovizyon pou : 4.4V ~ 6.5V

Vòltaj lojik - VIL, VIH : -

Kouran - Peak Sòti (Sous, Lavabo) : 500mA, 500mA

Kalite Antre : Inverting

Segondè Voltage Side - Max (Bootstrap) : 150V

Rise / Fall Time (Tip) : 200ns, 200ns

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

Pake Aparèy Founisè : 8-SOIC

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : AUI , AUIRS

dokiman pou AUIRS20161S

Fich : AUIRS20161S.pdf

pwodwi ki gen rapò pou AUIRS20161S Infineon Technologies

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