RJK2009DPM-00#T0 - MOSFET N-CH 200V 40A TO3PFM

Fabricant Nimewo Pati

RJK2009DPM-00#T0

Entèn Nimewo Pati

AX-RJK2009DPM-00#T0

Fabricant

Renesas Electronics America

Kout Deskripsyon

MOSFET N-CH 200V 40A TO3PFM

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

17232 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen RJK2009DPM-00#T0 nan stock pou vann.

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Espesifikasyon pou RJK2009DPM-00#T0

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stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : RJK2009DPM-00#T0

Fabricant : Renesas Electronics America

Deskripsyon : MOSFET N-CH 200V 40A TO3PFM

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 200V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 40A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 36 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : -

Chaje Gate (Qg) (Max) @ Vgs : 72nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 2900pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 60W (Tc)

Operating Tanperati : -

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-3PFM

Pake / Ka : TO-3PFM, SC-93-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : RJK20 , RJK2009D

dokiman pou RJK2009DPM-00#T0

Fich : RJK2009DPM-00#T0.pdf

pwodwi ki gen rapò pou RJK2009DPM-00#T0 Renesas Electronics America

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