SQJ912BEP-T1_GE3 - MOSFET N-CH DUAL 40V PPSO-8L

Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N-CH DUAL 40V PPSO-8L
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
763795 Pieces
referans pri
USD 0.367326
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SQJ912BEP-T1_GE3 nan stock pou vann.
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Espesifikasyon pou SQJ912BEP-T1_GE3

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : SQJ912BEP-T1_GE3
Fabricant : Vishay Siliconix
Deskripsyon : MOSFET N-CH DUAL 40V PPSO-8L
Seri : Automotive, AEC-Q101, TrenchFET®
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 30A (Tc)
RD sou (Max) @ Id, Vgs : 11 mOhm @ 9A, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 60nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 3000pF @ 25V
Pouvwa - Max : 48W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : PowerPAK® SO-8 Dual
Pake Aparèy Founisè : PowerPAK® SO-8 Dual
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : SQJ91 , SQJ912BE

dokiman pou SQJ912BEP-T1_GE3

pwodwi ki gen rapò pou SQJ912BEP-T1_GE3 Vishay Siliconix

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