SUD35N10-26P-T4GE3 - MOSFET N-CH 100V 35A TO252

Fabricant Nimewo Pati

SUD35N10-26P-T4GE3

Entèn Nimewo Pati

AX-SUD35N10-26P-T4GE3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET N-CH 100V 35A TO252

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

420255 Pieces

referans pri

~~USD 0.667602~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SUD35N10-26P-T4GE3 nan stock pou vann.

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Espesifikasyon pou SUD35N10-26P-T4GE3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SUD35N10-26P-T4GE3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET N-CH 100V 35A TO252

Seri : TrenchFET®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 35A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 7V, 10V

RD sou (Max) @ Id, Vgs : 26 mOhm @ 12A, 10V

Vgs (th) (Max) @ Id : 4.4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 47nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 2000pF @ 12V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 8.3W (Ta), 83W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : TO-252, (D-Pak)

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SUD35N , SUD35N10-

dokiman pou SUD35N10-26P-T4GE3

Fich : SUD35N10-26P-T4GE3.pdf

pwodwi ki gen rapò pou SUD35N10-26P-T4GE3 Vishay Siliconix

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