BYG10M-M3/TR3 - DIODE AVALANCHE 1KV 1.5A

Fabricant Nimewo Pati

BYG10M-M3/TR3

Entèn Nimewo Pati

AX-BYG10M-M3/TR3

Fabricant

Vishay Semiconductor Diodes Division

Kout Deskripsyon

DIODE AVALANCHE 1KV 1.5A

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

3515840 Pieces

referans pri

~~USD 0.0798~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen BYG10M-M3/TR3 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou BYG10M-M3/TR3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : BYG10M-M3/TR3

Fabricant : Vishay Semiconductor Diodes Division

Deskripsyon : DIODE AVALANCHE 1KV 1.5A

Seri : Automotive, AEC-Q101

Estati Pati : Active

Kalite dyòd : Avalanche

Voltage - DC Ranvèse (Vr) (Max) : 1000V

Kouran - Mwayèn Rèktifye (Io) : 1.5A

Voltage - Forward (Vf) (Max) @ Si : 1.15V @ 1.5A

Vitès : Standard Recovery >500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : 4µs

Kouran - Fèy Reverse @ Vr : 1µA @ 1000V

Kapasite @ Vr, F : -

Mounting Kalite : Surface Mount

Pake / Ka : DO-214AC, SMA

Pake Aparèy Founisè : DO-214AC (SMA)

Operating Tanperati - Junction : -55°C ~ 150°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : BYG1 , BYG10M

dokiman pou BYG10M-M3/TR3

Fich : BYG10M-M3/TR3.pdf

pwodwi ki gen rapò pou BYG10M-M3/TR3 Vishay Semiconductor Diodes Division

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